DCR2720V52 phase control thyristor preliminary information ds5804 - 2 november 20 10 (ln2 7693 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions DCR2720V52* dcr2720v50 dcr2720v48 5200 5000 4800 t vj = - 40c to 125c, i drm = i rrm = 200ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. * 5000v @ - 40 0 c, 5200v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: DCR2720V52 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 5200v i t(av) 2720a i tsm 36700a dv/dt* 1500v/s di/dt 300a/s * higher dv/dt selections available outline type code: v (see package details for further information) fig. 1 package outline
semiconductor DCR2720V52 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 2720 a i t(rms) rms value - 4270 a i t continuous (direct) on - state current - 4120 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 36.7 ka i 2 t i 2 t for fusing v r = 0 6.73 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00746 c/w single side cooled anode dc - 0.0130 c/w cathode dc - 0.0178 c/w r th(c - h) thermal resistance C case to heatsink clamping force 54kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 48.0 59.0 kn
semiconductor DCR2720V52 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 200 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 30v, 10 ? , non - repetitive - 300 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500a to 2000a at t case = 125c - 0.90 v threshold voltage C high level 2000a to 7200a at t case = 125c - 1.1 v r t on - state slope resistance C low level 500a to 2000a at t case = 125c - 0.3428 m ? on - state slope resistance C high level 2000a to 7200a at t case = 125c - 0.2414 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, - 600 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 2000 4750 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor DCR2720V52 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = - 0.450546 b = 0.251217 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000242 d = - 0.008134 these values are valid for t j = 125c for i t 500a to 7200a 0 1000 2000 3000 4000 5000 6000 7000 0.6 1.0 1.4 1.8 2.2 2.6 3.0 instantaneous on - state current i t - (a) instantaneous on - state voltage v t - (v) min 125 c max 125 c min 25 c max 25 c
semiconductor DCR2720V52 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 0 1000 2000 3000 4000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 maximum case temperature, t case ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 maximum heatsink temperature, t heatsink - ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor DCR2720V52 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 maximum permissible case temperature , t case - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 maximum heatsik temperature t heatsink - ( o c) mean on - state current, i t(av ) - (a) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 14 16 18 20 0.001 0.1 10 thermal impedance , z th(j - c) - ( c/kw) time ( s ) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.9206 1.8299 3.4022 1.3044 t i (s) 0.0076807 0.0579454 0.4078613 1.2085 anode side cooled r i (c/kw) 0.9032 1.6719 3.0101 7.4269 t i (s) 0.0075871 0.0536531 0.3144537 5.624 cathode side cooled r i (c/kw) 0.9478 2.0661 1.6884 13.0847 t i (s) 0.0078442 0.0645541 0.3894389 4.1447 ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.34 0.88 180 1.34 0.88 180 1.33 0.88 120 1.57 1.30 120 1.57 1.30 120 1.57 1.29 90 1.83 1.54 90 1.84 1.54 90 1.83 1.53 60 2.08 1.81 60 2.08 1.81 60 2.07 1.80 30 2.27 2.11 30 2.28 2.11 30 2.26 2.10 15 2.36 2.28 15 2.37 2.28 15 2.35 2.26
semiconductor DCR2720V52 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 5 10 15 20 25 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) q smax = 4737.8*(di/dt) 0.4604 q smin = 2053.4*(di/dt) 0.5824 conditions: tj = 125 o c, v rpeak ~ 3100v v rm ~ 2100v snubber as appopriate to control reverse volts 0 100 200 300 400 500 600 0 5 10 15 20 25 reverse recovery current. i rr - (a) rate of decay of on - state current, di/dt - (a/us) i rrmin =37.083*(di/dt) 0.7817 i rrmax = 58.357*(di/dt) 0.7168 conditions: t j = 125 o c, v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts
semiconductor DCR2720V52 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor DCR2720V52 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: v fig.16 package outline anode cathode nominal weight 1160g gate hole ?3.60 x 2.00 deep (in both electrodes) ?1.5 3rd angle projection if in doubt ask do not scale 20 offset (nom.) to gate tube ?110.0 max. ?73.0 nom. ?73.0 nom. for package height see table device maximum thickness (mm) minimum thickness (mm) dcr1474sv18 27.265 26.515 dcr1475sv28 27.34 26.59 dcr1476sv42 27.57 26.82 dcr1478sv48 27.69 26.94 dcr1574sv28 27.34 26.59 dcr1575sv42 27.57 26.82 dcr1576sv52 27.69 26.94 dcr4060v22 27.265 26.515 dcr3780v28 27.34 26.59 dcr3030v42 27.57 26.82 DCR2720V52 27.69 26.94 dcr2290v65 27.95 27.2 dcr1910v85 28.31 27.56
semiconductor DCR2720V52 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. alth ough we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, in jury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electr ocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe ha ndling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditi ons, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect pers ons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current ver sion of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this pu blication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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